ISC015N04NM5ATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N04NM5ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 40V Normal Level | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | β |
| Continuous Drain Current (ID) at Ta=25C | 33 A | β |
| Continuous Drain Current (ID) at Tc=25C | 206 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 115 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) | β |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | β |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package | β | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Lead-Free | β | Yes |