ISC015N04NM5ATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N04NM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | OptiMOS 5 / StrongIRFET 30 V |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | β |
| Continuous Drain Current (ID) at Ta=25C | 33 A | β |
| Continuous Drain Current (ID) at Tc=25C | 206 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 115 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, per OptiMOS 5) | β |
| Package / Case | PG-TDSON-8 FL (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Package | β | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Gate Drive | β | Logic-level compatible |