ISC015N04NM5ATMA1 vs ISC0703NLSATMA1 Comparison

Detailed side-by-side comparison of ISC015N04NM5ATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 βœ“ Active
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 βœ“ Active

Specification Comparison

Parameter ISC015N04NM5ATMA1 ISC0703NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.51
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 40V Normal Level β€”
FET Type N-Channel β€”
Technology OptiMOS 5 (trench MOSFET) Trench MOSFET (OptiMOS family)
Drain-Source Voltage (VDS) 40 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) [DATA_NEEDED: VGS(th) typical and min/max]
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A β€”
Continuous Drain Current (ID) at Ta=25C 33 A 13 A
Continuous Drain Current (ID) at Tc=25C 206 A 57 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 115 W β€”
Operating Temperature Range -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction)
Package / Case PG-TDSON-8 FL (SuperSO8 5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
RoHS Status Compliant Compliant
MSL Level 1 (per Infineon SuperSO8 family) [DATA_NEEDED: MSL level]
Drive Level Normal Level (VGS(th) ~3.4 V) β€”
Polarity / Channel Type β€” N-Channel
Power Dissipation (PD) at Ta=25C β€” 3 W
Power Dissipation (PD) at Tc=25C β€” 44 W
Package β€” PG-TDSON-8 (5x6 mm)
Standard Package Quantity β€” 5,000 (reel)
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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