ISC015N06NM5ATMA1 vs BSC005N03LS5IATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and BSC005N03LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC015N06NM5ATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | β |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Part Number | β | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 42 A |
| Continuous Drain Current (ID) at Tc | β | 433 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | β | 0.55 mΞ© at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | β | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 188 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Polarity | β | N-Channel |
| MSL Level | β | [DATA_NEEDED: MSL rating] |