ISC015N06NM5LF2ATMA1 vs IAUC120N04S6N009ATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and IAUC120N04S6N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveInfineon
IAUC120N04S6N009ATMA1
IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΞ© OptiMOS 6 MOSFET | Infineon
IAUC120N04S6N009ATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5LF2ATMA1 | IAUC120N04S6N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $1.60 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 217 W | β |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΞ© | β |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3 V | β |
| Gate-Source Voltage Rating | Β±20 V | β |
| Reverse Recovery Charge (Qrr) | 1.3 nC | β |
| Input Capacitance (Ciss) | 6.9 nF | β |
| Output Capacitance (Coss) | 1.3 nF | β |
| Reverse Transfer Capacitance (Crss) | 55 pF | β |
| Total Gate Charge (Qg) | 90 nC | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 6 40V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 120 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed I_D value] |
| R_DS(on) max @ V_GS=10V | β | 0.9 mΞ© |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: V_GS(th) typical value] |
| Total Gate Charge Q_g typ | β | [DATA_NEEDED: Q_g typical] |
| Power Dissipation (Tc) | β | 150 W |
| Thermal Resistance R_thJC max | β | 1.0 K/W |
| Automotive Qualification | β | AEC-Q101 |
| MSL Level | β | 1 |
| Lead-Free / Halogen-Free | β | Yes (per Infineon product page) |