ISC015N06NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveInfineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5LF2ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $3.10 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 217 W | β |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΞ© | β |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3 V | β |
| Gate-Source Voltage Rating | Β±20 V | β |
| Reverse Recovery Charge (Qrr) | 1.3 nC | β |
| Input Capacitance (Ciss) | 6.9 nF | β |
| Output Capacitance (Coss) | 1.3 nF | β |
| Reverse Transfer Capacitance (Crss) | 55 pF | β |
| Total Gate Charge (Qg) | 90 nC | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS | Compliant | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 315 A |
| Continuous Drain Current (ID, Ta) | β | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 1.5 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | 3.8 V at 267 Β΅A |
| Total Power Dissipation (Ta) | β | 3.8 W |
| Total Power Dissipation (Tc) | β | 300 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Gate Drive Voltage (typ) | β | 10 V |
| Single-Pulse Avalanche Energy | β | [DATA_NEEDED: EAS value] |
| RoHS Status | β | Compliant |