ISC015N06NM5LF2ATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5LF2ATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $1.78 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 217 W | β |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΞ© | β |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3 V | β |
| Gate-Source Voltage Rating | Β±20 V | β |
| Reverse Recovery Charge (Qrr) | 1.3 nC | β |
| Input Capacitance (Ciss) | 6.9 nF | β |
| Output Capacitance (Coss) | 1.3 nF | β |
| Reverse Transfer Capacitance (Crss) | 55 pF | β |
| Total Gate Charge (Qg) | 90 nC | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |
| Maximum Junction Temperature | β | 175 Β°C |
| Series | β | OptiMOS 7 |