ISC015N06NM5LF2ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5LF2ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5LF2ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $0.86 |
| Technology | OptiMOS 5 Linear FET 2 (N-Channel) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 32 A | β |
| Pulsed Drain Current (IDM) at Tc | 275 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 217 W | β |
| On-Resistance RDS(on) max at VGS=10V | 1.55 mΞ© | 2.8 mOhm |
| On-Resistance RDS(on) at VGS=10V (typ) | 1.3 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3 V | β |
| Gate-Source Voltage Rating | Β±20 V | β |
| Reverse Recovery Charge (Qrr) | 1.3 nC | β |
| Input Capacitance (Ciss) | 6.9 nF | β |
| Output Capacitance (Coss) | 1.3 nF | β |
| Reverse Transfer Capacitance (Crss) | 55 pF | β |
| Total Gate Charge (Qg) | 90 nC | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |