ISC016N08NM8ATMA1 vs IAUC50N08S5L096ATMA1 Comparison

Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and IAUC50N08S5L096ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC016N08NM8ATMA1 ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon

ISC016N08NM8ATMA1 βœ“ Active
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 βœ“ Active

Specification Comparison

Parameter ISC016N08NM8ATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 8 OptiMOS 5
Channel Type N-Channel β€”
Drain-Source Voltage (VDS max) 80 V β€”
Gate-Source Voltage (VGS max) +/-20 V (typical rating) β€”
Continuous Drain Current (ID) at Ta 29 A β€”
Continuous Drain Current (ID) at Tc [DATA_NEEDED: pulsed/continuous current rating at Tc] β€”
Pulsed Drain Current (IDM) at Tc 268 A β€”
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 263 W β€”
On-State Resistance RDS(on) typ @ VGS=10V 1.6 mOhm β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] β€”
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +175Β°C
Package SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) PG-TDSON-8-33 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology Trench-gate OptiMOS 8 (silicon) β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Lead-free (per Infineon product page) β€”
MSL Level 1 (per JEDEC J-STD-020E classification for SuperSO8) [DATA_NEEDED: MSL level]
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) β€” 50 A (Tc)
Pulsed Drain Current (IDM) β€” 200 A
On-Resistance (RDS(on)) β€” 9.6 mΞ© max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) β€” 60 W (Tc)
Automotive Qualification β€” AEC-Q101
Lead-Free β€” Yes

Datasheets & Resources

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