ISC016N08NM8ATMA1 vs IPD046N08N5ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and IPD046N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC016N08NM8ATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | OptiMOSβ’ 5 80V |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | β |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 263 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOSβ’ 5 trench MOSFET |
| RoHS Status | Compliant | ROHS3 Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | 1 (per JEDEC J-STD-020) |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 80 V |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 4.6 mΞ© |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Power Dissipation (PD) at Tc=25Β°C | β | 125 W |
| Operating Junction Temperature Range | β | -55 Β°C to +175 Β°C |
| Package / Case | β | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | β | Single N-channel, 3-pin (Gate / Drain tab / Source) |