ISC016N08NM8ATMA1 vs ISC011N06LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC016N08NM8ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | 37 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | 288 A |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 263 W | 188 W |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +175C |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | OptiMOS 5 |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | [DATA_NEEDED: MSL level] |
| Part Number | β | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| RDS(on) max at VGS=10V | β | 1.15 mOhm |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |