ISC016N08NM8ATMA1 vs ISC110N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC016N08NM8ATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC016N08NM8ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Product Series | OptiMOS 8 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS max) | 80 V | β |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | β |
| Continuous Drain Current (ID) at Ta | 29 A | 11 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | 62 A |
| Pulsed Drain Current (IDM) at Tc | 268 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 263 W | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | β |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 120 V |
| On-Resistance RDS(on) max at VGS=10V | β | 9.8 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.1 V |
| Total Gate Charge (Qg) | β | 15.4 nC |
| Input Capacitance (Ciss) | β | 1.1 nF |
| Output Capacitance (Coss) | β | 330 pF |
| Reverse Transfer Capacitance (Crss) | β | 10 pF |
| Power Dissipation (Pd) at Tc | β | 94 W |
| Power Dissipation (Pd) at Ta | β | 3 W |
| Avalanche Energy (EAS) | β | 185 mJ |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |