ISC025N08NM5LF2ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC025N08NM5LF2ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC025N08NM5LF2ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.74 | $0.86 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 23 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 198 A | β |
| On-Resistance (RDS(on)) Max | 2.55 mΞ© | β |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | β |
| Total Gate Charge (Qg) Max | 96 nC | β |
| Power Dissipation @ TA | 3 W | β |
| Power Dissipation @ TC | 217 W | β |
| Package | PG-TDSON-8 FL (Surface Mount) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Polarity | N-Channel | β |
| RoHS Status | Compliant | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |