ISC025N08NM5LF2ATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC025N08NM5LF2ATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC025N08NM5LF2ATMA1
ISC025N08NM5LF2ATMA1 - 80V 2.55mΞ© Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC025N08NM5LF2ATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.74 | $0.49 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 LF2 | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 23 A | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 198 A | β |
| On-Resistance (RDS(on)) Max | 2.55 mΞ© | β |
| Gate-Source Threshold (VGS(th)) Max | 3.9 V | β |
| Total Gate Charge (Qg) Max | 96 nC | β |
| Power Dissipation @ TA | 3 W | β |
| Power Dissipation @ TC | 217 W | β |
| Package | PG-TDSON-8 FL (Surface Mount) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +175 C |
| Polarity | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Ordering Code Suffix | ATMA1 (Tape & Reel, 13-inch) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | StrongIRFET 2 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |