ISC028N03LF2SATMA1 vs IPT015N10NF2SATMA1 Comparison
Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveInfineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC028N03LF2SATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $3.10 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 30V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 128 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation at TA | 3 W | β |
| Power Dissipation at TC | 83 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 315 A |
| Continuous Drain Current (ID, Ta) | β | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 1.5 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | 3.8 V at 267 Β΅A |
| Total Power Dissipation (Ta) | β | 3.8 W |
| Total Power Dissipation (Tc) | β | 300 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Technology | β | OptiMOS trench, N-channel enhancement |
| Gate Drive Voltage (typ) | β | 10 V |
| Single-Pulse Avalanche Energy | β | [DATA_NEEDED: EAS value] |
| RoHS Status | β | Compliant |