ISC028N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of ISC028N03LF2SATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | ISC028N03LF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $2.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 30V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 128 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | 1.55 mΞ© |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation at TA | 3 W | β |
| Power Dissipation at TC | 83 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-62 (5x6 mm) with exposed pad | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Technology | β | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 217 W |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3 V |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| Total Gate Charge (Qg) | β | 90 nC |
| RoHS | β | Compliant |