ISC033N03LF2SATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of ISC033N03LF2SATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC033N03LF2SATMA1
ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
ISC033N03LF2SATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | ISC033N03LF2SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | β |
| Part Family | OptiMOS LF2 (<= 40V) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS trench (<= 40V) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TC | 108 A | β |
| Continuous Drain Current (ID) at TA | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | β |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | β |
| Configuration | Single N-channel, source-down | Dual N-Channel (independent MOSFETs) |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |