ISC033N03LF2SATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC033N03LF2SATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC033N03LF2SATMA1
ISC033N03LF2SATMA1 - 30V 108A N-Channel MOSFET | Infineon
ISC033N03LF2SATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC033N03LF2SATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | β |
| Part Family | OptiMOS LF2 (<= 40V) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS trench (<= 40V) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TC | 108 A | β |
| Continuous Drain Current (ID) at TA | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | Β±20 V |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package | PG-TDSON-8-62 (Source-Down, 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 Β°C to +150 Β°C |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | β |
| Configuration | Single N-channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Part Number | β | ISC045N03L5SATMA1 |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |