ISC045N03L5SATMA1 vs IPB014N06NATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IPB014N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC045N03L5SATMA1 IPB014N06NATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $2.10
Manufacturer Infineon Technologies β€”
Part Number ISC045N03L5SATMA1 β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 / Trench OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TC=25Β°C 63 A β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mΞ© β€”
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 Β΅A β€”
Gate-Source Voltage (VGS) max Β±20 V [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) 13 nC @ VGS=10 V β€”
Input Capacitance (Ciss) 870 pF @ VDS=15 V β€”
Power Dissipation (PD) at TA=25Β°C 2.5 W β€”
Power Dissipation (PD) at TC=25Β°C 30 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TO263-7 (D2PAK-7)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C β€”
RoHS Status Compliant β€”
Transistor Polarity β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 34 A
Continuous Drain Current (ID) at Tc β€” 180 A
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 214 W
On-Resistance RDS(on) max β€” 1.4 mΞ© at VGS=10V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Avalanche Rating β€” 100% avalanche tested
Qualification β€” JEDEC qualified for target applications
Primary Application β€” Synchronous rectification, motor control

Datasheets & Resources

Browse All Products Create BOM Request Quote