ISC045N03L5SATMA1 vs IPD70N10S3L12ATMA2 Comparison
Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IPD70N10S3L12ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveInfineon
IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon
IPD70N10S3L12ATMA2 β ActiveSpecification Comparison
| Parameter | ISC045N03L5SATMA1 | IPD70N10S3L12ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | IPD70N10S3L12ATMA2 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 / Trench | OptiMOS-T (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 63 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 Β΅A | β |
| Gate-Source Voltage (VGS) max | Β±20 V | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | β |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC | β | 70 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance R_DS(on) typ @ VGS=10V | β | 11.5 mOhm |
| On-State Resistance R_DS(on) max @ VGS=10V | β | [DATA_NEEDED: R_DS(on) max] |
| Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD at TC | β | 125 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | [DATA_NEEDED: MSL level] |