ISC045N03L5SATMA1 vs IQFH55N04NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IQFH55N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQFH55N04NM6ATMA1
IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon
IQFH55N04NM6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC045N03L5SATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench | Trench MOSFET (OptiMOS 6 generation) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C | — |
| RoHS Status | Compliant | Compliant |
| Part Family | — | OptiMOS 6 |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Operating Junction Temperature | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |