ISC045N03L5SATMA1 vs ISC030N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and ISC030N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveInfineon
ISC030N12NM6ATMA1
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC045N03L5SATMA1 | ISC030N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Part Number | ISC045N03L5SATMA1 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench | OptiMOS 6 (trench) |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 63 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 Β΅A | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | β |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| RoHS Status | Compliant | β |
| Drain-Source Voltage (VDS max) | β | 120 V |
| Continuous Drain Current (ID, Tc=25 C) | β | 194 A |
| Continuous Drain Current (ID, Ta) | β | 21 A |
| On-Resistance RDS(on) max | β | 3.4 mOhm @ VGS=10 V |
| On-Resistance RDS(on) typical | β | 3.0 mOhm @ VGS=10 V |
| Power Dissipation (Tc=25 C) | β | 250 W |
| Power Dissipation (Ta) | β | 3 W |
| Operating Temperature | β | -55 C to +175 C (junction) |
| Gate Drive Voltage (recommended) | β | 10 V (full RDS(on)) |
| Configuration | β | Single N-channel, source-down |
| Packaging (suffix) | β | Tape & Reel (ATMA1) |
| RoHS | β | Compliant |