ISC046N13NM6ATMA1 vs IAUCN04S7N009ATMA1 Comparison
Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC046N13NM6ATMA1
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
ISC046N13NM6ATMA1 β ActiveInfineon
IAUCN04S7N009ATMA1
IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon
IAUCN04S7N009ATMA1 β ActiveSpecification Comparison
| Parameter | ISC046N13NM6ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.08 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 135 V | β |
| Continuous Drain Current (ID) at TA | 17 A | β |
| Continuous Drain Current (ID) at TC | 142 A | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 211 W | β |
| Package / Case | PG-TDSON-8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | β |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Gate Drive (recommended) | 10 V (typical) | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Series | β | OptiMOS 7 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 175 A |
| R_DS(on) Max @ V_GS = 10 V | β | 0.96 mΞ© |
| Gate Drive Voltage (V_GS) | β | 10 V |
| Package | β | PG-TDSON-8-34 (Surface Mount) |
| Operating Temperature | β | -55C to +175C |
| Qualification | β | AEC-Q101 (Automotive) |
| MSL Level | β | 1 |
| Configuration | β | Single N-Channel |
| Supplier Device Package | β | PG-TDSON-8-34 |