ISC046N13NM6ATMA1 vs ISC011N06LM5ATMA1 Comparison

Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active
Infineon
ISC011N06LM5ATMA1

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 βœ“ Active

Specification Comparison

Parameter ISC046N13NM6ATMA1 ISC011N06LM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.08 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 135 V 60 V
Continuous Drain Current (ID) at TA 17 A β€”
Continuous Drain Current (ID) at TC 142 A β€”
Power Dissipation (PD) at TA 3 W β€”
Power Dissipation (PD) at TC 211 W β€”
Package / Case PG-TDSON-8 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55C to +175C
Technology OptiMOS 6 trench MOSFET OptiMOS 5
Gate Drive (recommended) 10 V (typical) β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Part Number β€” ISC011N06LM5ATMA1
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 37 A
Continuous Drain Current (ID) at Tc β€” 288 A
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 188 W
RDS(on) max at VGS=10V β€” 1.15 mOhm
Package β€” PG-TDSON-8-17 (SuperSO8 5x6 mm)
Pin Count β€” 8
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]

Datasheets & Resources

Browse All Products Create BOM Request Quote