ISC046N13NM6ATMA1 vs ISC060N10NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC060N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active
Infineon
ISC060N10NM6ATMA1

ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon

ISC060N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC046N13NM6ATMA1 ISC060N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.08 $1.43
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 135 V 100 V
Continuous Drain Current (ID) at TA 17 A β€”
Continuous Drain Current (ID) at TC 142 A β€”
Power Dissipation (PD) at TA 3 W β€”
Power Dissipation (PD) at TC 211 W β€”
Package / Case PG-TDSON-8 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55 Β°C to +175 Β°C (TJ)
Technology OptiMOS 6 trench MOSFET OptiMOS 6 (thin-wafer trench)
Gate Drive (recommended) 10 V (typical) β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Series β€” OptiMOS 6 100 V
Continuous Drain Current (ID) at Ta β€” 15 A
Continuous Drain Current (ID) at Tc β€” 97 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) β€” 6 mΞ© at VGS = 10 V, ID = 25 A
Gate-Source Threshold Voltage (VGS(th)) β€” 3.3 V (typical)
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Ta β€” 3 W
Power Dissipation (PD) at Tc β€” 125 W
Package β€” PG-TDSON-8 FL (5.15 x 6.15 mm)
Polarity β€” N-Channel
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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