ISC046N13NM6ATMA1 vs ISC0703NLSATMA1 Comparison

Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 βœ“ Active

Specification Comparison

Parameter ISC046N13NM6ATMA1 ISC0703NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.08 $0.51
Manufacturer Infineon Technologies β€”
Part Family OptiMOS 6 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 135 V 60 V
Continuous Drain Current (ID) at TA 17 A β€”
Continuous Drain Current (ID) at TC 142 A β€”
Power Dissipation (PD) at TA 3 W β€”
Power Dissipation (PD) at TC 211 W β€”
Package / Case PG-TDSON-8 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55C to +150C (junction)
Technology OptiMOS 6 trench MOSFET Trench MOSFET (OptiMOS family)
Gate Drive (recommended) 10 V (typical) β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25C β€” 13 A
Continuous Drain Current (ID) at Tc=25C β€” 57 A
Power Dissipation (PD) at Ta=25C β€” 3 W
Power Dissipation (PD) at Tc=25C β€” 44 W
Package β€” PG-TDSON-8 (5x6 mm)
Standard Package Quantity β€” 5,000 (reel)
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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