ISC046N13NM6ATMA1 vs ISC0802NLSATMA1 Comparison
Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC0802NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC046N13NM6ATMA1
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
ISC046N13NM6ATMA1 β ActiveInfineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveSpecification Comparison
| Parameter | ISC046N13NM6ATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.08 | $1.80 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 135 V | 100 V |
| Continuous Drain Current (ID) at TA | 17 A | β |
| Continuous Drain Current (ID) at TC | 142 A | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 211 W | β |
| Package / Case | PG-TDSON-8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (Power MOSFET) |
| Gate Drive (recommended) | 10 V (typical) | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Series | β | OptiMOS 5 |
| Part Number | β | ISC0802NLSATMA1 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 150 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| RDS(on) max at VGS=10V | β | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | β | 2.5 W |
| Power Dissipation (Pd) at Tc | β | 125 W |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6 mm) |