ISC046N13NM6ATMA1 vs ISC110N12NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active
Infineon
ISC110N12NM6ATMA1 ISC110N12NM6ATMA1 - 120V 9.8mΞ© OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 - 120V 9.8mΞ© OptiMOS 6 N-MOSFET | Infineon

ISC110N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC046N13NM6ATMA1 ISC110N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.08 $0.51
Manufacturer Infineon Technologies β€”
Part Family OptiMOS 6 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 135 V 120 V
Continuous Drain Current (ID) at TA 17 A β€”
Continuous Drain Current (ID) at TC 142 A β€”
Power Dissipation (PD) at TA 3 W β€”
Power Dissipation (PD) at TC 211 W β€”
Package / Case PG-TDSON-8 β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C β€”
Technology OptiMOS 6 trench MOSFET β€”
Gate Drive (recommended) 10 V (typical) β€”
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Polarity β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 11 A
Continuous Drain Current (ID) at Tc β€” 62 A
On-Resistance RDS(on) max at VGS=10V β€” 9.8 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) typ β€” 3.1 V
Total Gate Charge (Qg) β€” 15.4 nC
Input Capacitance (Ciss) β€” 1.1 nF
Output Capacitance (Coss) β€” 330 pF
Reverse Transfer Capacitance (Crss) β€” 10 pF
Power Dissipation (Pd) at Tc β€” 94 W
Power Dissipation (Pd) at Ta β€” 3 W
Avalanche Energy (EAS) β€” 185 mJ
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Package β€” SuperSO8 (TDSON-8)

Datasheets & Resources

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