ISC058N04NM5ATMA1 vs BSZ024N04LS6ATMA1 Comparison
Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and BSZ024N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β Active
Specification Comparison
| Parameter | ISC058N04NM5ATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.60 | $0.46 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 40V Normal Level | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 63 A | β |
| Continuous Drain Current (ID, Ta=25C) | 17 A | β |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 42 W | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount, top-side drain pad |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 (shielded-gate trench) |
| Operating Temperature Range | -55C to +175C | β |
| RoHS Compliance | RoHS Compliant | β |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | β |
| Gate Drive Level | Normal Level (10V VGS recommended) | β |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Ta) | β | 24 A |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Pulsed Drain Current (I_DM) | β | 130 A |
| R_DS(on) Max @ V_GS=10V | β | 2.4 mΞ© |
| R_DS(on) Max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | β | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | β | 25 nC |
| Input Capacitance (C_iss) | β | 1.8 nF |
| Output Capacitance (C_oss) | β | 19 pF |
| Power Dissipation (P_D, Ta) | β | 2.5 W |
| Power Dissipation (P_D, Tc) | β | 75 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |