ISC058N04NM5ATMA1 vs IQD005N04NM6CGATMA1 Comparison
Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and IQD005N04NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β ActiveInfineon
IQD005N04NM6CGATMA1
IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | ISC058N04NM5ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.60 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 40V Normal Level | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 63 A | β |
| Continuous Drain Current (ID, Ta=25C) | 17 A | β |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 42 W | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 (trench FET) |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +150 Β°C (TJ) |
| RoHS Compliance | RoHS Compliant | β |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | β |
| Gate Drive Level | Normal Level (10V VGS recommended) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | β | 0.5 mΞ© |
| Continuous Drain Current (ID) at Ta | β | 58 A |
| Continuous Drain Current (ID) at Tc | β | 610 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 333 W |
| Pin Count | β | 9 |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Source Configuration | β | Source-Down (bottom-side source for PCB heatsinking) |