ISC058N04NM5ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of ISC058N04NM5ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β Active
Specification Comparison
| Parameter | ISC058N04NM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.60 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V Normal Level | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 63 A | β |
| Continuous Drain Current (ID, Ta=25C) | 17 A | β |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 42 W | β |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Operating Temperature Range | -55C to +175C | -55 C to +150 C (junction) |
| RoHS Compliance | RoHS Compliant | β |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | β |
| Gate Drive Level | Normal Level (10V VGS recommended) | β |
| Product Series | β | OptiMOS 8 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |
| MSL Level | β | 1 (per JEDEC J-STD-020E classification for SuperSO8) |