ISC060N06NM6ATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of ISC060N06NM6ATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | ISC060N06NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.33 | $2.21 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | 32 A |
| Continuous Drain Current (ID) at Tc | 62 A | β |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 50 W | 217 W |
| Package | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Configuration | Single N-Channel | β |
| Operating Temperature Range | -55C to +175C (junction, per OptiMOS 6 family) | β |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 3 V |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | 90 nC |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| On-Resistance RDS(on) max at VGS=10V | β | 1.55 mΞ© |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS | β | Compliant |