ISC060N06NM6ATMA1 vs ISZ072N06NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC060N06NM6ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC060N06NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.33 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | β |
| Continuous Drain Current (ID) at Tc | 62 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TDSON-8 (TDSON-8) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 6 trench MOSFET |
| Configuration | Single N-Channel | β |
| Operating Temperature Range | -55C to +175C (junction, per OptiMOS 6 family) | -55C to +175C ( Tj max 175C ) |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 3.3 V (typ) |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | β |
| Product Family | β | OptiMOS 6 60V |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 57 A |
| Continuous Drain Current (ID, Ta) | β | 12.7 A |
| RDS(on) max @ VGS=10V | β | 7.2 mΞ© |
| Power Dissipation (Tc=25Β°C) | β | 50 W |
| Power Dissipation (Ta) | β | 2.5 W |