ISC060N10NM6ATMA1 vs ISC110N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC060N10NM6ATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC060N10NM6ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.43 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 100 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at Ta | 15 A | 11 A |
| Continuous Drain Current (ID) at Tc | 97 A | 62 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Drain-Source On-Resistance (RDS(on)) | 6 mΞ© at VGS = 10 V, ID = 25 A | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Package | PG-TDSON-8 FL (5.15 x 6.15 mm) | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | β |
| Polarity | N-Channel | N-Channel |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| On-Resistance RDS(on) max at VGS=10V | β | 9.8 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.1 V |
| Total Gate Charge (Qg) | β | 15.4 nC |
| Input Capacitance (Ciss) | β | 1.1 nF |
| Output Capacitance (Coss) | β | 330 pF |
| Reverse Transfer Capacitance (Crss) | β | 10 pF |
| Power Dissipation (Pd) at Tc | β | 94 W |
| Power Dissipation (Pd) at Ta | β | 3 W |
| Avalanche Energy (EAS) | β | 185 mJ |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |