ISC0703NLSATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of ISC0703NLSATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | ISC0703NLSATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.98 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta=25C | 13 A | β |
| Continuous Drain Current (ID) at Tc=25C | 57 A | β |
| Power Dissipation (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 44 W | β |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS-6 N-channel trench MOSFET |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Standard Package Quantity | 5,000 (reel) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |