ISC0703NLSATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC0703NLSATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC0703NLSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.47 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | β |
| Continuous Drain Current (ID) at Tc=25C | 57 A | β |
| Power Dissipation (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 44 W | β |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 trench MOSFET |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Standard Package Quantity | 5,000 (reel) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 / StrongIRFET 30 V |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Gate Drive | β | Logic-level compatible |