ISC0703NLSATMA1 vs ISC015N04NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC0703NLSATMA1 by Infineon and ISC015N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.98 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | 33 A |
| Continuous Drain Current (ID) at Tc=25C | 57 A | 206 A |
| Power Dissipation (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 44 W | β |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 (trench MOSFET) |
| Package | PG-TDSON-8 (5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C (junction, per OptiMOS 5) |
| Standard Package Quantity | 5,000 (reel) | β |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per Infineon SuperSO8 family) |
| RoHS Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | 3.4 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 40V Normal Level |
| FET Type | β | N-Channel |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| R_DS(on) max | β | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 115 W |
| Package / Case | β | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Pin Count | β | 8 |
| Drive Level | β | Normal Level (VGS(th) ~3.4 V) |