ISC0802NLSATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | ISC0802NLSATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Part Number | ISC0802NLSATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS-6 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 150 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| RDS(on) max at VGS=10V | 3.6 mOhm | β |
| Power Dissipation (Pd) at Ta | 2.5 W | β |
| Power Dissipation (Pd) at Tc | 125 W | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | 1 (unlimited) |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |