ISC0802NLSATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveInfineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC0802NLSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $0.47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 / StrongIRFET 30 V |
| Part Number | ISC0802NLSATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at Tc | 150 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| RDS(on) max at VGS=10V | 3.6 mOhm | β |
| Power Dissipation (Pd) at Ta | 2.5 W | β |
| Power Dissipation (Pd) at Tc | 125 W | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Gate Drive | β | Logic-level compatible |
| MSL Level | β | 1 (per JEDEC J-STD-020) |