ISC0802NLSATMA1 vs ISC046N13NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveInfineon
ISC046N13NM6ATMA1
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
ISC046N13NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC0802NLSATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $1.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Part Number | ISC0802NLSATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 135 V |
| Continuous Drain Current (ID) at Tc | 150 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| RDS(on) max at VGS=10V | 3.6 mOhm | β |
| Power Dissipation (Pd) at Ta | 2.5 W | β |
| Power Dissipation (Pd) at Tc | 125 W | β |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Part Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 17 A |
| Continuous Drain Current (ID) at TC | β | 142 A |
| Power Dissipation (PD) at TA | β | 3 W |
| Power Dissipation (PD) at TC | β | 211 W |
| Package / Case | β | PG-TDSON-8 |
| Gate Drive (recommended) | β | 10 V (typical) |
| Packaging | β | Tape & Reel |