ISC0802NLSATMA1 vs ISC0703NLSATMA1 Comparison

Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC0802NLSATMA1

ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon

ISC0802NLSATMA1 βœ“ Active
Infineon
ISC0703NLSATMA1 ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon

ISC0703NLSATMA1 βœ“ Active

Specification Comparison

Parameter ISC0802NLSATMA1 ISC0703NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.80 $0.51
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Part Number ISC0802NLSATMA1 β€”
FET Type N-Channel β€”
Technology OptiMOS 5 (Power MOSFET) Trench MOSFET (OptiMOS family)
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc 150 A β€”
Continuous Drain Current (ID) at Ta 22 A β€”
RDS(on) max at VGS=10V 3.6 mOhm β€”
Power Dissipation (Pd) at Ta 2.5 W β€”
Power Dissipation (Pd) at Tc 125 W β€”
Operating Temperature Range -55 C to +175 C -55C to +150C (junction)
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8 (5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25C β€” 13 A
Continuous Drain Current (ID) at Tc=25C β€” 57 A
Power Dissipation (PD) at Ta=25C β€” 3 W
Power Dissipation (PD) at Tc=25C β€” 44 W
Standard Package Quantity β€” 5,000 (reel)
MSL Level β€” [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) β€” [DATA_NEEDED: EAS rating]

Datasheets & Resources

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