ISC0805NLSATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | ISC0805NLSATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 13 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 71 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 74 W | β |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | β |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | β |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | β |
| Input Capacitance Ciss | 2.2 nF | β |
| Reverse Transfer Capacitance Crss | 23 pF | β |
| Output Capacitance Coss | 360 pF | β |
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +175C |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Technology | β | Trench (OptiMOS 5, thin-wafer) |
| MSL Level | β | 1 (unlimited) |