ISC0805NLSATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β ActiveInfineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC0805NLSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.47 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 13 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 71 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 74 W | β |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | β |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | β |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | β |
| Input Capacitance Ciss | 2.2 nF | β |
| Reverse Transfer Capacitance Crss | 23 pF | β |
| Output Capacitance Coss | 360 pF | β |
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 / StrongIRFET 30 V |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Technology | β | OptiMOS 5 trench MOSFET |
| Gate Drive | β | Logic-level compatible |
| MSL Level | β | 1 (per JEDEC J-STD-020) |