ISC0805NLSATMA1 vs ISC046N13NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC0805NLSATMA1

ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 βœ“ Active
Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC0805NLSATMA1 ISC046N13NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.08
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOSβ„’ 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 135 V
Continuous Drain Current (ID) at TA=25Β°C 13 A β€”
Continuous Drain Current (ID) at TC=25Β°C 71 A β€”
Power Dissipation (PD) at TA 2.5 W 3 W
Power Dissipation (PD) at TC 74 W 211 W
On-Resistance RDS(on) max at VGS=10V 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] β€”
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 2.3 V β€”
Gate Charge Qg typ at VGS=4.5V 16 nC β€”
Input Capacitance Ciss 2.2 nF β€”
Reverse Transfer Capacitance Crss 23 pF β€”
Output Capacitance Coss 360 pF β€”
Package PG-TDSON-8-46 (SuperSO8 5x6) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C -55 C to +175 C
RoHS Status Compliant Compliant
Part Family β€” OptiMOS 6
Continuous Drain Current (ID) at TA β€” 17 A
Continuous Drain Current (ID) at TC β€” 142 A
Package / Case β€” PG-TDSON-8
Technology β€” OptiMOS 6 trench MOSFET
Gate Drive (recommended) β€” 10 V (typical)
Packaging β€” Tape & Reel

Datasheets & Resources

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