ISC0805NLSATMA1 vs ISC0703NLSATMA1 Comparison
Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and ISC0703NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β Active
Specification Comparison
| Parameter | ISC0805NLSATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25Β°C | 13 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 71 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 74 W | β |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | β |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | β |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | β |
| Input Capacitance Ciss | 2.2 nF | β |
| Reverse Transfer Capacitance Crss | 23 pF | β |
| Output Capacitance Coss | 360 pF | β |
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TDSON-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 13 A |
| Continuous Drain Current (ID) at Tc=25C | β | 57 A |
| Power Dissipation (PD) at Ta=25C | β | 3 W |
| Power Dissipation (PD) at Tc=25C | β | 44 W |
| Technology | β | Trench MOSFET (OptiMOS family) |
| Standard Package Quantity | β | 5,000 (reel) |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS rating] |