ISC151N08NM6ATMA1 vs BSC12DN20NS3GATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active
Infineon
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon

BSC12DN20NS3GATMA1 βœ“ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 BSC12DN20NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.61
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 200 V
Continuous Drain Current (TA=25Β°C) 9.2 A β€”
Continuous Drain Current (TC=25Β°C) 37 A β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 48 W β€”
On-Resistance RDS(on) max 15.1 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Technology OptiMOS 6 OptiMOS power MOSFET
Package PG-TDSON-8 FL PG-TDSON-8-5
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Channel Mode Enhancement β€”
Operating Temperature -55 Β°C to +175 Β°C β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 200V
Continuous Drain Current (ID, Tc) β€” 11.3 A
Power Dissipation (PD, Tc) β€” 50 W
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
MSL Level β€” 1 (per JEDEC J-STD-020)
Configuration β€” Single N-channel
Pin Count β€” 8

Datasheets & Resources

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