ISC151N08NM6ATMA1 vs IAUC120N04S6N010ATMA1 Comparison

Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active
Infineon
IAUC120N04S6N010ATMA1

IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 βœ“ Active

Specification Comparison

Parameter ISC151N08NM6ATMA1 IAUC120N04S6N010ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.68
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (TA=25Β°C) 9.2 A β€”
Continuous Drain Current (TC=25Β°C) 37 A β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 48 W β€”
On-Resistance RDS(on) max 15.1 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Technology OptiMOS 6 OptiMOS 6
Package PG-TDSON-8 FL PG-TDSON-8-34 (5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Number of Pins 8 β€”
Channel Mode Enhancement β€”
Operating Temperature -55 Β°C to +175 Β°C β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Drain-Source Voltage (V(BR)DSS) β€” 40 V
Continuous Drain Current (Id, Tc) β€” 150 A
Power Dissipation (Pd, Tc) β€” 150 W
RDS(on) at VGS=10V (typ) β€” 1.0 mΞ©
RDS(on) at VGS=10V (max per LCSC excerpt) β€” 1.03 mΞ©
Gate-Source Threshold (VGS(th), typ) β€” 3 V (at 90 Β΅A)
Automotive Qualification β€” AEC-Q101
Operating Temperature Range β€” -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family)
MSL Level β€” 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Drive Recommendation β€” 10 V VGS for full RDS(on) spec
Polarity β€” Single N-channel

Datasheets & Resources

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