ISC151N08NM6ATMA1 vs IPTC017N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IPTC017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveInfineon
IPTC017N12NM6ATMA1 - 120V 1.7mΞ© 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC151N08NM6ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $3.95 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | 120 V |
| Continuous Drain Current (TA=25Β°C) | 9.2 A | β |
| Continuous Drain Current (TC=25Β°C) | 37 A | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 48 W | β |
| On-Resistance RDS(on) max | 15.1 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | β |
| Technology | OptiMOS 6 | OptiMOS 6, N-channel trench MOSFET |
| Package | PG-TDSON-8 FL | PG-HDSOP-16 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C (TJ max) |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID, Ta) | β | 32 A |
| Continuous Drain Current (ID, Tc) | β | 331 A |
| On-State Resistance RDS(on) max | β | 1.7 mΞ© at VGS = 10 V |
| Gate-Source Threshold VGS(th) | β | 2.4 V (typ) |
| Total Gate Charge QG | β | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | β | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | β | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 395 W |
| Gate Drive Voltage (recommended) | β | 10 V |