ISC151N08NM6ATMA1 vs IQD005N04NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC151N08NM6ATMA1 by Infineon and IQD005N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveInfineon
IQD005N04NM6ATMA1
IQD005N04NM6ATMA1 - 40V 0.5mΞ© N-Ch MOSFET PG-TSON-8-9 | Infineon
IQD005N04NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC151N08NM6ATMA1 | IQD005N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.82 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (TA=25Β°C) | 9.2 A | β |
| Continuous Drain Current (TC=25Β°C) | 37 A | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 48 W | β |
| On-Resistance RDS(on) max | 15.1 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | β |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| Package | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | -55 Β°C to +175 Β°C | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 58 A |
| Pulsed Drain Current (IDM) at Tc | β | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 0.5 mOhm |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 333 W |
| Operating Temperature Range | β | -55C to +150C |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| MSL Level | β | 1 |