ISK057N04LM6ATLA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATLA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveInfineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATLA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Trench (OptiMOS 6) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tc | 64 A | β |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at TA=25C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| RDS(on) typical at VGS=10V | 5.7 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate Charge (Qg total) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 39.1 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | [DATA_NEEDED: Tj min/max] |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Packaging | Tape & Reel (TR) | β |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc=25C) | β | 60 A |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6) |
| Shipping Packaging | β | Tape & Reel (T/R) |